In this part of the example, we will perform small signal analysis on the MOSFET under investigation. For the Hurkx model used here, the coefficients are as follows:įor descriptions of the recombination processes as well as the tunneling models, please see Lumerical's knowledgebase on Semiconductors. For the Hurkx model used here the tunneling mass coefficient mt is 0.25. Similarly, under 'Band to Band Tunneling', two models, Hurkx and Schenk are available. When enabled, two models, Hurkx and Schenk are available. In particular the 'Recombination' tab of this material is of interest in this example.įor all parts of this example, the bulk recombination models, trap-assisted, radiative and Auger recombination are enabled. Further, trap assisted tunneling can be enabled using the field drop down menu under 'Carrier Lifetime Correction Models' section. The semiconductor is defined using the more complex semiconductor models available in the material database. The insulator is defined with a DC dielectric permittivity value. The conductors are defined with a work function. Conductor (for aluminum in the source, drain and body contacts and n-gate silicon for the gate).Expand the Material Group in the Objects Tree so you can view the materials used in the simulation. Once the meshing is done, open and run the doping_profile.lsf script file provided in the associated files section.įor this example, silicon, aluminum, n-gate silicon and SiO 2 (silicon dioxide) are defined. Click on the 'mesh' button to mesh the simulation. The doping concentration of the source and drain regions can be visualized as shown below. Next, diffusion doping regions are used to specify the dopant concentrations in the source and drain region and the region underneath the gate. This is accomplished by defining a region of constant doping that encompasses the entire geometry. To define the space-charge regions in the silicon, first, the background doping concentration of the silicon is set to represent a p-type epitaxial layer with a concentration of 1x10 15 cm -3.A 2 um silicon layer is grown on a thick silicon dioxide (oxide) layer.

Notice that the MOSFET is specified as follows:

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